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| TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case. The molded package itself is an IR filter, spectrum matched to IR emitters (p > 850nm or 950 nm). Features D High photo sensitivity D Daylight filter D Molded package with side view lens D Angle of half sensitivity = 37 D Matched with IR-Emitter TSKS5400S 16733 Applications D Detector in electronic control and drive circuits Order Instruction Ordering Code TEKT5400S TEKT5400S-ASZ Remarks 2000 pcs in Plastic Bags 2.54 mm Pin distance (lead to lead), height of taping 16 mm Absolute Maximum Ratings Tamb = 25C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Soldering Temperature Thermal Resistance Junction/Ambient tx5s tp/T = 0.5, tp x 10 ms Tamb x 40 C Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tamb Tsd RthJA Value 70 7 100 200 150 100 -40...+100 -40...+85 260 400 Unit V V mA mA mW C C C C K/W Document Number 81569 Rev. 1, 24-May-02 www.vishay.com 1 (7) TEKT5400S Vishay Semiconductors Basic Characteristics Tamb = 25C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Ee = 1 = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 mW/cm2, Test Conditions IC = 1 mA IE = 100 A VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 ECE = 5 V, Ee = 1 p = 950 nm mW/cm2, Symbol VCEO VECO ICEO CCEO Ica p 0.5 VCEsat ton toff fc 6 5 110 2 Min. 70 7 1 6 4 37 920 850...980 0.3 100 Typ. Max. Unit V V nA pF mA deg nm nm V s s kHz www.vishay.com 2 (7) Document Number 81569 Rev. 1, 24-May-02 TEKT5400S Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 200 Ptot -Total Power Dissipation (mW) 180 160 140 120 100 80 60 40 20 0 0 16719 10 Ica - Collector Light Current ( mA ) RthJA TEKT5400S 1 0.1 VCE=5V l=950nm 0.01 0.01 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 16707 0.1 1 10 Ee - Irradiance ( mW/cm2 ) Figure 1. Total Power Dissipation vs. Ambient Temperature 104 ICEO - Collector Dark Current ( nA ) Ica - Collector Light Current ( mA ) Figure 4. Relative Radiant Intensity vs. Angular Displacement 10 103 VCE=10V 102 l=950nm Ee=1mW/cm2 0.5mW/cm2 1 0.2mW/cm2 0.1mW/cm2 0.1 101 100 20 94 8249 40 60 80 100 16718 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 2. Collector Dark Current vs. Ambient Temperature Figure 5. Collector Light Current vs. Collector Emitter Voltage CCEO - Collector Emitter Capacitance ( pF ) 20 16 f=1MHz 2.0 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 VCE=5V Ee=1mW/cm2 l=950nm 12 8 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 20 40 60 80 100 94 8247 Tamb - Ambient Temperature ( C ) Figure 3. Relative Collector Current vs. Ambient Temperature Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number 81569 Rev. 1, 24-May-02 www.vishay.com 3 (7) TEKT5400S Vishay Semiconductors ton / t off - Turn on / Turn off Time ( m s ) 12 10 8 6 4 2 0 0 94 8253 0 VCE=5V RL=100W l=950nm I e rel - Relative Radiant Intensity 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 ton toff 4 8 12 16 16732 IC - Collector Current ( mA ) Figure 7. Turn On/Turn Off Time vs. Collector Current S ( l ) rel - Relative Spectral Sensitivity Figure 9. Relative Radiant Intensity vs. Angular Displacement 1.0 0.8 0.6 0.4 0.2 0 700 800 900 1000 1100 94 8270 l - Wavelength ( nm ) Figure 8. Relative Spectral Sensitivity vs. Wavelength www.vishay.com 4 (7) Document Number 81569 Rev. 1, 24-May-02 TEKT5400S Vishay Semiconductors Dimensions in mm 16706 Document Number 81569 Rev. 1, 24-May-02 www.vishay.com 5 (7) TEKT5400S Vishay Semiconductors Tape and Ammopack Standards Kennzeichnung: Barcode-Etikett siehe 5.6.4 Labeling: Barcode-label see 5.6.4 16716 www.vishay.com 6 (7) Document Number 81569 Rev. 1, 24-May-02 TEKT5400S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81569 Rev. 1, 24-May-02 www.vishay.com 7 (7) |
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